- Sequential read of up to 2,400 MB/s
- Sequential write of up to 1,750 MB/s
- Faster boot-up and quicker application launch
- Better overall system performance
- Reliable storage
- Low power consumption, cool and quiet operation
Specification
- Usable Capacities500G
- NAND Components3D NAND
- InterfacePCIe Gen 3×4 NVMe 1.3
- Form FactorM.2 2280
- Package Dimensions (L×W×H)123 x 85 x 4.3 mm
- Product Dimensions (L×W×H)22 x 80 x 2 mm
- Weight6.6g
- Max Sequential Read*500G: Up to 2200MB/s
- Max Sequential Write*500GB: up to 1200MB/s
- TBW500GB: 110;
- PCIe Link Power ManagementAPST, ASPM, L1.2
- Operating Temperature0°C to 70°C
- Storage Temperature-40°C to 85°C
- CertificationsBSMI, CE, FCC, KCC, VCCI, REACH, RoHS
- MTBF2 Million Hours
- Error Correction CodeLess than 1 sector per ten quadrillion bits read
- Product Health MonitoringSelf-Monitoring, Analysis and Reporting Technology (S.M.A.R.T)
- Full End-to-End Data path protectionSupported
- Performance OptimizationTRIM (requires OS support)